Researchers have pioneered a new technique using pressure to manipulate magnetism in thin film materials used to enhance performance in electronic devices.
They used neutron scattering at Oak Ridge National Laboratory’s Spallation Neutron Source to explore the spacial density of atoms and observe how magnetism in a lanthanum-cobalt-oxide film changed with applied pressure. “We developed a novel method to identify the critical role that strain has on the magnetism of films and their interfaces,” said ORNL’s Michael R. Fitzsimmons. “This allows us to study magnetism in thin films without having to compare a lot of differently grown samples.” The new technique, described in Physical Review Letters, will enable novel studies into complex correlations between magnetism and pressure involving a broad class of thin films in a wide range of applications. The thin film materials were developed at ORNL, and complementary measurements were made at Argonne National Laboratory’s Advanced Photon Source.—Gage Taylor
Original Source: ORNL News
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